http://www.datasheet.es/PDF/283824/IRF634A-pdf.html WebMar 1, 2024 · Product Code: IRF634A SAMSUNG TRANSISTOR TO-220 (LOT OF 10) Availability: In Stock; 0 reviews / Write a review. IRF634A SAMSUNG TRANSISTOR TO-220 …
onsemi IRF634A - Datasheet PDF & Tech Specs
WebNovember 2001IRF634B/IRFS634B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.1A, 250V, RDS (on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar, DMOS technology. WebON Semiconductor's IRF634A is trans mosfet n-ch 250v 8.1a 3-pin(3+tab) to-220 in the fet transistors, mosfets category. Check part details, parametric & specs and download pdf … images of the word big
IRF634A specs MOSFETs - Datasheets.com
WebIRF634A FEATURES BVDSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS (on) = 0.45 Lower Input Capacitance Improved Gate Charge ID = 8.1 A Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 250V TO-220 Lower RDS (ON): 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings … WebIRF634A: Descripción: Advanced Power MOSFET: Fabricantes: Fairchild Semiconductor Logotipo: Hay una vista previa y un enlace de descarga de IRF634A (archivo pdf) en la … IRF634A Product details. FEATURES. ♦ Avalanche Rugged Technology. ♦ Rugged Gate Oxide Technology. ♦ Lower Input Capacitance. ♦ Improved Gate Charge. ♦ Extended Safe Operating Area. ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V. images of the word